Mfr Part #:

SIDR510EP-T1-RE3

Name: SIDR510EP-T1-RE3
Brand: Vishay
SKU: SIDR510EP-T1-RE3

Mfr Name: Vishay

Description:

N-CHANNEL 100 V (D-S) 175C MOSFE

Stock on Request

SIDR510EP-T1-RE3 Description

Short technical summary and product information.

N-CHANNEL 100 V (D-S) 175C MOSFE

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	33A (Ta), 148A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4980 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA