SIB914DK-T1-GE3 The Vishay Dale SIB914DK-T1-GE3 is a dual N-channel MOSFET featuring 8V drain-source voltage and 1.5A current rating. It is housed in a surface-mount PowerPAK SC-75-6L Dual package.
Mfr Part #:

SIB914DK-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIB914DK-T1-GE3 is a dual N-channel MOSFET featuring 8V drain-source voltage and 1.5A current rating. It is housed in a surface-mount PowerPAK SC-75-6L Dual package.
✓ Total Stock: 2,430 pcs
$ Price Range: $0.99

SIB914DK-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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2,430 pcs
2430 pcs On Request 1 On Request On Request On Request On Request On Request

SIB914DK-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SIB914DK-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SIB914DK-T1-GE3 is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 8V and a continuous drain current rating of 1.5A. The on-resistance (Rds On) is specified as a maximum of 113mOhm at 2.5A and 4.5V.

 

The MOSFET has a gate charge (Qg) of 2.6nC maximum at 5V and a gate threshold voltage (Vgs(th)) of 800mV maximum at 250µA. Input capacitance (Ciss) is 125pF maximum at 4V.

 

With a power dissipation rating of 3.1W, it operates within a temperature range of -55°C to 150°C (TJ). The component is packaged in a PowerPAK® SC-75-6L Dual, suitable for surface mounting.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are currently unverified.

SIB914DK-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIB914DK-T1-GE3 Dual N-Channel MOSFET
Subcategory: Arrays

SIB914DK-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIB914DK-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIB914DK-T1-GE3 Features

  • Dual N-Channel MOSFET configuration.
  • 8V maximum drain-source voltage.
  • 1.5A continuous current rating.
  • 113mOhm maximum on-resistance.
  • Surface mount PowerPAK SC-75-6L Dual package.

SIB914DK-T1-GE3 Applications

  • Load switching in portable devices
  • Battery management in handheld electronics
  • Power distribution in compact systems
  • DC-DC converter output switching

SIB914DK-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIB914DK-T1-GE3?

The maximum drain-source voltage is 8V.

What package does the SIB914DK-T1-GE3 come in?

It comes in a PowerPAK SC-75-6L Dual surface-mount package.

What is the operating temperature range of the SIB914DK-T1-GE3?

The operating temperature range is -55°C to 150°C (junction).

What is the maximum continuous drain current of the SIB914DK-T1-GE3?

The maximum continuous drain current is 1.5A.

What is the on-resistance of the SIB914DK-T1-GE3?

The on-resistance is 113mOhm maximum at 2.5A and 4.5V gate drive.

What is the gate charge of the SIB914DK-T1-GE3?

The gate charge is 2.6nC maximum at 5V.

What is the gate threshold voltage of the SIB914DK-T1-GE3?

The gate threshold voltage is 800mV maximum at 250µA.

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