| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,145 pcs
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1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SIB6808L from MEILAI is a next-generation N-Channel enhancement mode trench power MOSFET. This device is engineered for reliability and electrical parameter repeatability, making it suitable for various power switching applications.
Key electrical characteristics include a high Drain-to-Source breakdown voltage of 768V and a continuous drain current rating of 80A at 25°C (VGS=10V). The MOSFET boasts a low typical on-resistance (RDS(ON)) of 7mΩ at 10V gate-source voltage and 30A drain current. It also features a single pulse avalanche energy rating of 320mJ.
The device operates within a storage temperature range of -55°C to +175°C. It is housed in a TO-252-2L package, designed for surface mounting.
This MOSFET utilizes advanced trench process technology, contributing to its ultra-low RDS(ON) and high avalanche energy capabilities. It is fully characterized for avalanche voltage and current, ensuring robust performance in demanding applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the SIB6808L is 80A at 25°C with a 10V gate-source voltage.
The Drain-to-Source breakdown voltage (VDS) for the SIB6808L is a minimum of 768V.
The typical on-resistance (RDS(ON)) for the SIB6808L is 7mΩ when tested at a gate-source voltage of 10V and a drain current of 30A.
The SIB6808L is supplied in a TO-252-2L package.
The operating junction and storage temperature range for the SIB6808L is from -55°C to +175°C.
The single pulse avalanche energy (EAS) rating for the SIB6808L is 320mJ.
The reverse recovery time (trr) for the SIB6808L's body diode is typically 57nS.