SIB457EDK-T1-GE3 The Vishay Dale SIB457EDK-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a 9A continuous drain current. It features a low on-resistance of 35mOhm at 4.8A, 4.5V.
Mfr Part #:

SIB457EDK-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIB457EDK-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a 9A continuous drain current. It features a low on-resistance of 35mOhm at 4.8A, 4.5V.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.99

SIB457EDK-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

SIB457EDK-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIB457EDK-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIB457EDK-T1-GE3 is a P-Channel MOSFET designed for load switching applications in portable devices and charging circuits. It offers a 20V drain-source voltage and a maximum continuous drain current of 9A.

 

Key electrical characteristics include a low on-resistance of 35mOhm at 4.8A and 4.5V, and a gate-source threshold voltage of 1V at 250µA. The device has a maximum gate charge of 44 nC at 8V.

 

This MOSFET is housed in a PowerPAK® SC-75-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.

 

The component is compliant with RoHS3 standards and has an MSL rating of 1.

SIB457EDK-T1-GE3 Quick Information

Product Type: MOSFET
Series: SIB
Canonical Name: Vishay Dale SiB457EDK P-Channel 20V Power MOSFET
Subcategory: P-Channel

SIB457EDK-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIB457EDK-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIB457EDK-T1-GE3 Features

  • P-Channel 20V Power MOSFET.
  • Low on-resistance of 35mOhm.
  • 9A continuous drain current.
  • Surface mount PowerPAK SC-75-6 package.
  • RoHS3 compliant and MSL 1.

SIB457EDK-T1-GE3 Applications

  • Load switch for portable devices
  • Load switch for charging circuits
  • Ideal for battery-powered applications
  • Suitable for low-voltage power management
  • Used in handheld electronics

SIB457EDK-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIB457EDK-T1-GE3?

The drain-source voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9A at Tc = 25°C.

What is the on-resistance of the SIB457EDK-T1-GE3?

The on-resistance is a maximum of 35mOhm at 4.8A and 4.5V.

What is the package type for this MOSFET?

This MOSFET is supplied in a PowerPAK® SC-75-6 package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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