| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SiB456DK-T1-GE3 is a TrenchFET® power MOSFET featuring a thermally enhanced PowerPAK® SC-75 package with a small footprint. This N-Channel MOSFET is rated for a 100V drain-source voltage and a continuous drain current of 6.3A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 185mOhm at 1.9A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The device has an input capacitance of 130pF at 50V and a typical gate charge of 1.8nC.
Designed for applications such as DC/DC converters and full-bridge converters, the SiB456DK-T1-GE3 operates within a junction temperature range of -55°C to 150°C. It is available in a lead (Pb)-free and halogen-free configuration, housed in a compact PowerPAK® SC-75-6L package suitable for surface mounting.
This MOSFET is 100% R g and UIS tested, ensuring reliability for demanding power applications. The PowerPAK SC-75 package is leadless, with exposed copper at the terminal ends.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SiB456DK-T1-GE3 is 100 V.
The maximum continuous drain current is 6.3A at a case temperature of 25°C.
The Rds(on) is a maximum of 185mOhm at a drain current of 1.9A and a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to 150°C.
The SiB456DK-T1-GE3 is in a PowerPAK® SC-75-6 package.