| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIB441EDK-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a drain-source voltage (VDS) of 12V and a continuous drain current (ID) of up to 9A at 25°C case temperature.
This MOSFET exhibits low on-resistance values, with a maximum of 0.0255 Ω at VGS = -4.5V and 4A. The typical gate charge (Qg) is 13.4 nC. It operates within a wide temperature range of -55°C to 150°C.
The device is housed in a thermally enhanced PowerPAK® SC-75-6L package, known for its small footprint and surface-mount capability. This package is suitable for portable devices such as smartphones and tablet PCs, where space is a constraint. The MOSFET is designed for applications like battery switches and load switches.
Key electrical characteristics include a gate-source voltage (VGS) range of ±8V and a gate threshold voltage (Vgs(th)) of 900mV at 250µA. The maximum power dissipation is 13W at 25°C case temperature and 2.4W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-12 V
-9 A at Tc = 25 °C
25.5 mΩ maximum
PowerPAK SC-75-6 surface mount
-55°C to +150°C (junction and storage)
900 mV maximum at Id = 250 µA
13.4 nC