| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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181 pcs
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181 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiB417AEDK-T1-GE3 is a P-Channel MOSFET with a 1.2V (G-S) rating, designed for applications such as load switching in portable devices, smartphones, and tablet PCs. It utilizes TrenchFET® Power MOSFET technology and a thermally enhanced PowerPAK® SC-75 package, offering a small footprint and low on-resistance.
Key electrical specifications include a maximum drain-source voltage of 8V and a continuous drain current of 9A at 25°C case temperature. The on-resistance is rated at a maximum of 32mOhm at 3A and 4.5V Vgs. Gate charge is a maximum of 18.5 nC at 5V Vgs, and input capacitance is 878 pF at 4V Vds.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount PowerPAK® SC-75-6L package, suitable for compact designs. The device offers a typical ESD protection of 2500V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 8V.
The continuous drain current is 9A at a case temperature of 25°C.
The maximum on-resistance is 32mΩ at 3A drain current and 4.5V gate-to-source voltage.
The operating junction temperature range is -55°C to 150°C.
It is available in a PowerPAK SC-75-6 surface-mount package.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum power dissipation is 13W at case temperature 25°C and 2.4W at ambient temperature 25°C.