| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA975DJ-T1-GE3 is a dual P-channel MOSFET with a 12V drain-source voltage rating. It utilizes TrenchFET® power MOSFET technology and is housed in a thermally enhanced PowerPAK® SC-70-6 package, offering a small footprint and low on-resistance.
Key electrical specifications include a maximum Rds(on) of 41mOhm at 4.3A and 4.5V, a continuous drain current of 4.5A, and a gate charge of 26nC typical. The device operates over a temperature range of -55°C to 150°C.
This MOSFET is suitable for applications such as load switches, PA switches, and battery switches in portable devices and game consoles. It is surface-mounted and designed for efficient thermal management.
The PowerPAK SC-70-6 Dual package is a leadless package with exposed copper terminals. It requires careful soldering considerations, and manual soldering with a soldering iron is not recommended.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 12V.
The typical gate charge is 10.5 nC.
The maximum Rds On is 0.041 Ohm at 4.3A and 4.5V Vgs.
The SIA975DJ-T1-GE3 is supplied in a PowerPAK SC-70-6 Dual package.
The operating temperature range is -55°C to 150°C (TJ).