SIA931DJ-T1-GE3 The Vishay Dale SIA931DJ-T1-GE3 is a dual P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and a continuous drain current of 4.5A.
Mfr Part #:

SIA931DJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA931DJ-T1-GE3 is a dual P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and a continuous drain current of 4.5A.
✓ Total Stock: 103,020 pcs
$ Price Range: $0.99

SIA931DJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100,020 pcs
100020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 20+ On Request On Request

SIA931DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Voltage

SIA931DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA931DJ-T1-GE3 is a dual P-Channel MOSFET belonging to the TrenchFET Gen III power MOSFET family. It is housed in a thermally enhanced PowerPAK SC-70-6L package, offering a small footprint and low on-resistance.

 

Key electrical characteristics include a drain-source voltage of 30V and a continuous drain current of 4.5A. The on-resistance is specified at a maximum of 65mΩ at 3A and 10V Vgs. The device also features a typical gate charge of 4.1nC at -10V Vgs.

 

This MOSFET is suitable for applications such as battery switches, load switches, power management, and DC/DC converters in smart phones, tablet PCs, and mobile computing devices. It operates within a temperature range of -55°C to 150°C.

 

The surface-mount PowerPAK SC-70-6L package requires specific soldering considerations due to its leadless design. The device is lead (Pb)-free and halogen-free.

SIA931DJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: SiA931DJ
Canonical Name: Vishay Dale SiA931DJ Dual P-Channel 30V MOSFET
Subcategory: P-Channel

SIA931DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIA931DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA931DJ-T1-GE3 Features

  • Dual P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 4.5A continuous drain current.
  • Low on-resistance of 65mΩ.
  • Compact PowerPAK SC-70-6L package.

SIA931DJ-T1-GE3 Applications

  • Used for battery switches.
  • Suitable for load switches.
  • Ideal for power management.
  • Applicable in DC/DC converters.
  • Designed for mobile computing.

SIA931DJ-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIA931DJ-T1-GE3?

The maximum drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.5A.

What is the typical on-resistance at VGS = -10V?

The typical on-resistance at VGS = -10V is 0.065Ω.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SIA931DJ-T1-GE3 in?

The SIA931DJ-T1-GE3 is in a PowerPAK SC-70-6 Dual package.

Is the SIA931DJ-T1-GE3 RoHS compliant?

The SIA931DJ-T1-GE3 is RoHS3 Compliant.

Home
Account

Categories