SIA923EDJ-T1-GE3 The Vishay Dale SIA923EDJ-T1-GE3 is a dual P-Channel MOSFET designed for 20V applications. It offers a continuous drain current of 4.5A and features a low on-resistance.
Mfr Part #:

SIA923EDJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA923EDJ-T1-GE3 is a dual P-Channel MOSFET designed for 20V applications. It offers a continuous drain current of 4.5A and features a low on-resistance.
✓ Total Stock: 62,873 pcs
$ Price Range: $0.99

SIA923EDJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
49,853 pcs
49853 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request

SIA923EDJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Voltage

SIA923EDJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA923EDJ-T1-GE3 is a dual P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20V. It is designed for applications requiring efficient switching and power management.

 

This MOSFET features a low on-resistance, with values as low as 54mOhm at 3.8A and 4.5V. The continuous drain current is rated at 4.5A, with a pulsed drain current capability of up to 15A. The gate charge is typically 9.5nC at 8V, and the gate threshold voltage is 1.4V at 250µA.

 

The device is housed in a PowerPAK® SC-70-6 Dual package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET is also halogen-free and lead-free, complying with relevant environmental standards.

 

Applications include charger switches and load switches for portable devices, as well as DC/DC converters.

SIA923EDJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Dual P-Channel 20V 4.5A MOSFET
Subcategory: P-Channel

SIA923EDJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIA923EDJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA923EDJ-T1-GE3 Features

  • Dual P-Channel MOSFET configuration.
  • 20V Drain-Source Voltage rating.
  • 4.5A continuous drain current.
  • Low on-resistance values.
  • PowerPAK SC-70-6 Dual package.

SIA923EDJ-T1-GE3 Applications

  • Ideal for power management in portable devices
  • Used in load switching for battery systems
  • Suitable for DC-DC converter output stages
  • Ideal for battery protection circuits

SIA923EDJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage (Vdss) for the SIA923EDJ-T1-GE3?

The maximum Drain-Source Voltage (Vdss) is 20V.

What is the continuous drain current rating for this MOSFET?

The continuous drain current is 4.5A.

What is the typical on-resistance of the SIA923EDJ-T1-GE3?

The on-resistance is 54mOhm at 3.8A and 4.5V.

What is the operating temperature range for this device?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIA923EDJ-T1-GE3 supplied in?

It is supplied in a PowerPAK® SC-70-6 Dual package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET Halogen-free?

Yes, it is Halogen-free.

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