| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,133 pcs
|
2133 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SIA922EDJ-T1-GE3 is a dual N-channel MOSFET designed for power management applications in portable devices. It features TrenchFET technology and a thermally enhanced PowerPAK SC-70-6 Dual package, offering a small footprint and low on-resistance.
Key electrical characteristics include a 30V drain-source voltage and a continuous drain current of up to 4.5A. The on-resistance is as low as 64mOhm at 3A and 4.5V. It also offers a typical gate charge of 3.5nC at 4.5V and a gate threshold voltage of 1.4V at 250µA.
This MOSFET is suitable for load switching and DC/DC conversion. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 7.8W at 25°C case temperature.
The component is surface-mounted and comes in a PowerPAK SC-70-6 Dual package. It is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SC-70-6 Dual.
-55°C to 150°C.
64mOhm at 3A or 4.5A drain current.
Yes, rated for 1500V HBM.