| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Vishay SIA922EDJ is a Dual N-Channel Power MOSFET designed for applications requiring efficient power management. It offers a drain-source voltage of 30V and features TrenchFET technology for low on-resistance.
Key electrical characteristics include a maximum Rds(on) of 0.064 Ω at VGS = 4.5V. The device also provides a typical gate charge of 3.5 nC and typical ESD protection of 1500V (HBM).
Packaged in a thermally enhanced PowerPAK SC-70, this MOSFET is suitable for portable devices such as smartphones, tablet PCs, and mobile computing. Its applications include load switching, DC/DC converters, and general power management.
The operating temperature range is -55°C to 150°C. The component is RoHS3 compliant, REACH unaffected, and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIA922EDJ is 30 V.
The typical on-resistance (Rds(on)) of the SIA922EDJ at VGS = 4.5V is 0.064 Ω.
The SIA922EDJ MOSFET is supplied in a PowerPAK SC-70-6 Dual package.
The operating junction and storage temperature range for the SIA922EDJ is -55°C to 150°C.
The SIA922EDJ is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SIA922EDJ is 1 Unlimited.
The REACH Status for the SIA922EDJ is REACH Unaffected.