| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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230 pcs
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230 pcs | On Request | 1 | On Request | On Request | 0946+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA921EDJ-T1-GE3 is a dual P-channel MOSFET featuring TrenchFET® technology and a thermally enhanced PowerPAK® SC-70-6 Dual package. This component is suitable for load switch, PA switch, and battery switch applications in portable devices, as well as DC/DC converters.
Key electrical specifications include a 20V drain-source voltage and a continuous drain current of 4.5A. The on-resistance is as low as 0.059 Ohms at VGS = -4.5V. It also features a typical ESD protection of 1700V and high-speed switching capabilities.
The MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a surface-mount PowerPAK® SC-70-6 Dual package, designed for small footprint applications. The device is RoHS3 compliant and Halogen-free.
This MOSFET is designed for efficient power management in compact electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The continuous drain current is 4.5A.
The typical on-resistance is 0.059 Ohm at VGS = -4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a PowerPAK SC-70-6 Dual package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.