| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,749 pcs
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5749 pcs | On Request | 1 | On Request | On Request | 1117+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The SIA914DJ-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Dale. It is designed for low-voltage switching applications and comes in a compact SC70-6 surface-mount package. The device integrates two independent N-channel MOSFETs in a single package, providing space savings on the PCB.
Key electrical ratings include a maximum drain-source voltage (Vdss) of 20V and a maximum gate-source voltage of ±8V. The continuous drain current is rated at 4.5A when the case temperature is 25°C, and the pulsed drain current can reach 20A. Maximum power dissipation is 6.5W at a case temperature of 25°C, derating to 1.9W at ambient temperature of 25°C.
The operating junction and storage temperature range spans -55°C to 150°C, allowing use in harsh environments. The SC70-6 package enables easy integration into automated assembly processes.
This MOSFET is suitable for general-purpose switching, power management, and signal routing applications where low on-resistance and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The package is SC70-6.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum continuous drain current is 4.5A at a case temperature of 25°C, package limited.
The maximum power dissipation is 6.5W at a case temperature of 25°C.
Yes, it is a dual N-channel MOSFET as indicated by the '2N-CH' designation.
The maximum gate-source voltage is ±8V.