SIA910EDJ-T1-GE3 The Vishay Dale SIA910EDJ-T1-GE3 is a Dual N-Channel MOSFET designed for portable applications. It features TrenchFET technology and a PowerPAK SC-70-6 Dual package.
Mfr Part #:

SIA910EDJ-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA910EDJ-T1-GE3 is a Dual N-Channel MOSFET designed for portable applications. It features TrenchFET technology and a PowerPAK SC-70-6 Dual package.
✓ Total Stock: 25,800 pcs
$ Price Range: $0.99

SIA910EDJ-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,020 pcs
16020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request 1718+ On Request On Request
Non-Authorised Inventory information
780 pcs
780 pcs On Request 1 On Request On Request On Request On Request On Request

SIA910EDJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SIA910EDJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiA910EDJ is a Dual N-Channel MOSFET with a drain-source voltage of 12V. It utilizes TrenchFET technology for low on-resistance, offering values as low as 0.028 Ohms at a gate-source voltage of 4.5V and a drain current of 5.2A.

 

This MOSFET is housed in a thermally enhanced PowerPAK SC-70-6 Dual package, suitable for surface mounting. It has a continuous drain current rating of 4.5A and a maximum power dissipation of 7.8W at 25°C case temperature.

 

Key electrical characteristics include an input capacitance of 455pF at 6V and a gate charge of 16nC at 8V. The device also features typical ESD protection of 2400V.

 

Applications for the SiA910EDJ include load switching for portable devices and high-frequency DC/DC converters. Its small footprint and efficient thermal performance make it suitable for space-constrained designs.

SIA910EDJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: PowerPAK
Canonical Name: Vishay Siliconix SiA910EDJ Dual N-Channel 12 V MOSFET
Subcategory: Dual N-Channel

SIA910EDJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIA910EDJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA910EDJ-T1-GE3 Features

  • Dual N-Channel 12V MOSFET.
  • Low on-resistance: 28mOhm at 5.2A, 4.5V.
  • TrenchFET Power MOSFET technology.
  • Thermally enhanced PowerPAK SC-70-6 Dual package.
  • Suitable for portable applications.

SIA910EDJ-T1-GE3 Applications

  • Load switching in portable electronics.
  • Power management in battery-powered devices.
  • DC-DC converter circuits.
  • Battery protection circuits.

SIA910EDJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

12V.

What is the continuous drain current rating?

4.5A at TC=25°C.

What is the on-resistance?

28mOhm maximum at 5.2A with 4.5V gate drive.

What is the operating temperature range?

-55°C to 150°C.

What package does this MOSFET come in?

PowerPAK SC-70-6 Dual.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

What is the ESD protection rating?

2400V typical.

Home
Account

Categories