SIA907EDJT-T1-GE3 The Vishay Dale SIA907EDJT-T1-GE3 is a dual P-channel MOSFET designed for portable device applications. It offers a 20V drain-source voltage and 4.5A continuous drain current.
Mfr Part #:

SIA907EDJT-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA907EDJT-T1-GE3 is a dual P-channel MOSFET designed for portable device applications. It offers a 20V drain-source voltage and 4.5A continuous drain current.
✓ Total Stock: 233 pcs
$ Price Range: $0.99

SIA907EDJT-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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233 pcs
233 pcs On Request 1 On Request On Request 16+ On Request On Request

SIA907EDJT-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
Voltage

SIA907EDJT-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA907EDJT-T1-GE3 is a dual P-channel MOSFET featuring TrenchFET power MOSFET technology. It is housed in a thermally enhanced Thin PowerPAK SC-70-6L package, providing a small footprint and low on-resistance. This device is rated for a 20V drain-source voltage and can handle up to 4.5A of continuous drain current.

 

Key electrical characteristics include a low on-resistance of 57mΩ at VGS = -4.5V and a typical gate charge of 4.9nC. The MOSFET also features typical ESD protection of 1500V HBM and high-speed switching capabilities.

 

Applications for the SIA907EDJT-T1-GE3 include charger switches and load switches for portable devices, as well as battery management systems. The surface-mount PowerPAK SC-70-6L package is suitable for compact designs.

 

Absolute maximum ratings include a gate-source voltage of ±12V and a maximum power dissipation of 7.8W at TC = 25°C. Thermal resistance is rated at 65°C/W junction-to-ambient.

SIA907EDJT-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIA907EDJT-T1-GE3 Dual P-Channel 20V MOSFET
Subcategory: Dual P-Channel

SIA907EDJT-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIA907EDJT-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA907EDJT-T1-GE3 Features

  • Dual P-Channel TrenchFET MOSFET.
  • 20V Drain-Source Voltage rating.
  • 4.5A Continuous Drain Current.
  • Low On-Resistance: 57mΩ @ VGS = -4.5V.
  • PowerPAK SC-70-6L package.

SIA907EDJT-T1-GE3 Applications

  • Used as charger switches.
  • Functions as load switches.
  • Suitable for portable devices.
  • Employed in battery management.

SIA907EDJT-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIA907EDJT-T1-GE3?

The drain-source voltage is 20V.

What is the continuous drain current of the SIA907EDJT-T1-GE3?

The continuous drain current is 4.5A at TC = 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance is 0.057 Ohms at VGS = -4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SIA907EDJT-T1-GE3 in?

It is in a PowerPAK SC-70-6 Dual package.

Is the SIA907EDJT-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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