SIA811ADJ-T1-GE3 The Vishay Dale SIA811ADJ-T1-GE3 is a P-Channel MOSFET with an integrated Schottky Diode. It offers a 20V Drain-Source Voltage and a low Rds On resistance.
Mfr Part #:

SIA811ADJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA811ADJ-T1-GE3 is a P-Channel MOSFET with an integrated Schottky Diode. It offers a 20V Drain-Source Voltage and a low Rds On resistance.
✓ Total Stock: 3,343 pcs
$ Price Range: $0.99

SIA811ADJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,027 pcs
3027 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
316 pcs
316 pcs On Request 1 On Request On Request 11+ On Request On Request

SIA811ADJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA811ADJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA811ADJ-T1-GE3 is a P-Channel MOSFET designed for portable applications, featuring an integrated Schottky Diode. This device operates with a maximum Drain-Source Voltage of 20V and a Gate-Source Voltage range of ±8V.

 

Key electrical characteristics include a low Rds On resistance, with a maximum of 116mOhm at a Drain Current of 2.8A and Gate-Source Voltage of -4.5V. The typical Gate Charge is 4.9nC at 8V Gate-Source Voltage. The MOSFET can handle a continuous drain current of up to 4.5A at 25°C case temperature.

 

This component is housed in a thermally enhanced PowerPAK® SC-70-6 Dual package, offering a small footprint and a thin profile of 0.75mm. It is suitable for surface mounting and operates within a temperature range of -55°C to 150°C.

 

Applications include cellular charger switches, asynchronous DC/DC converters for portable devices, and load switches.

SIA811ADJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: SIA811
Canonical Name: P-Channel 20 V (D-S) MOSFET with Schottky Diode
Subcategory: P-Channel

SIA811ADJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA811ADJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA811ADJ-T1-GE3 Features

  • P-Channel MOSFET with integrated Schottky Diode.
  • 20V maximum Drain-Source Voltage.
  • Low Rds On resistance of 116mOhm.
  • Compact PowerPAK SC-70-6 Dual package.
  • Wide operating temperature range.

SIA811ADJ-T1-GE3 Applications

  • Cellular charger switch applications.
  • Asynchronous DC/DC converters.
  • Load switch for portable devices.

SIA811ADJ-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the SIA811ADJ-T1-GE3?

The maximum Drain-Source Voltage is 20V.

What is the maximum on-resistance of the SIA811ADJ-T1-GE3?

The maximum on-resistance is 116mOhm at a Drain Current of 2.8A and Gate-Source Voltage of -4.5V.

What is the package type for the SIA811ADJ-T1-GE3?

The package type is PowerPAK® SC-70-6 Dual.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

Is the SIA811ADJ-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SIA811ADJ-T1-GE3?

The Moisture Sensitivity Level is 1 Unlimited.

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