| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,292 pcs
|
2292 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA519EDJ-T1-GE3 is a versatile MOSFET array designed for various electronic applications. This component integrates both N-channel and P-channel MOSFETs, offering flexibility in circuit design. It supports a drain-source voltage (Vds) of up to 20V and can handle a continuous drain current (Id) of 4.5A under specific conditions.
The device features a low Rds On resistance, with a maximum of 40mOhm at 4.2A and 4.5V for the N-channel, and 90mOhm at -4.5A and -4.5V for the P-channel. The input capacitance (Ciss) is rated at a maximum of 350pF at 10V, and the gate charge (Qg) is typically 3.7nC for the N-channel and 5.3nC for the P-channel. The gate threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA, indicating it can operate as a logic-level gate.
Designed for surface mounting, the SIA519EDJ-T1-GE3 comes in a compact PowerPAK SC-70-6 Dual package, suitable for space-constrained applications. It operates within a wide temperature range of -55°C to 150°C (TJ). The component is RoHS3 compliant, making it suitable for modern electronic manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIA519EDJ-T1-GE3 is 20V.
The continuous drain current (Id) for the SIA519EDJ-T1-GE3 is 4.5A at TA = 25°C.
The Rds On resistance is a maximum of 40mOhm at 4.2A and 4.5V.
The operating junction temperature range is -55°C to 150°C.
The SIA519EDJ-T1-GE3 is supplied in a PowerPAK SC-70-6 Dual package.
Yes, the SIA519EDJ-T1-GE3 is RoHS3 compliant.