| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
259,120 pcs
|
259120 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | 2026-06-03 08:15:27 | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA517DJ-T1-GE3 is a dual N- and P-channel MOSFET array housed in a PowerPAK® SC-70-6 Dual package. This device is designed for applications such as load switching in portable electronics.
Key electrical specifications include a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 4.5A. The on-resistance (Rds(on)) is as low as 29mOhm at a gate-source voltage (Vgs) of 4.5V for the N-channel configuration. The gate charge (Qg) is typically 5.6nC for the N-channel and 8.2nC for the P-channel.
This MOSFET array operates over a temperature range of -55°C to 150°C. It is surface-mounted and features a logic-level gate. The device offers a maximum power dissipation of 6.5W at 25°C case temperature.
The PowerPAK® SC-70-6 Dual package provides a small footprint area and enhanced thermal performance. The datasheet indicates it is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SIA517DJ-T1-GE3 is 12V.
The SIA517DJ-T1-GE3 is in a PowerPAK® SC-70-6 Dual package.
The operating junction and storage temperature range for the SIA517DJ-T1-GE3 is -55°C to 150°C.
The RoHS status for the SIA517DJ-T1-GE3 is RoHS3 Compliant.
The Rds(on) is 29mOhm at a drain current of 5A and gate-source voltage of 4.5V.
The continuous drain current is 4.5A.