| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA485DJ-T1-GE3 is a P-Channel MOSFET designed for various applications requiring efficient power switching. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 1.6A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds(on)) of 2.6 Ohms at 10V gate-source voltage (Vgs) and 500mA drain current. The gate-source voltage range is ±20V, with a threshold voltage (Vgs(th)) of 4.5V at 250µA. The input capacitance (Ciss) is a maximum of 155 pF at 75V Vds, and the typical gate charge (Qg) is 4.2 nC at 10V Vgs.
Packaged in a thermally enhanced PowerPAK SC-70-6, this device is suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The maximum power dissipation is 15.6W at 25°C case temperature.
Applications include active clamp switching and load switching. The device is specified as RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150V.
-1.6A at case temperature 25°C.
2.6 Ohm maximum at Vgs = -10V and Id = -500mA.
PowerPAK SC-70-6 surface-mount package.
-55°C to +150°C (junction).
RoHS3 compliant.