| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA477EDJT-T1-GE3 is a P-Channel TrenchFET® Gen III power MOSFET designed for applications in smart phones, tablet PCs, and mobile computing. It features a 12V drain-source voltage and a low on-resistance, rated at 13mOhm maximum at 4.5V gate-source voltage and 5A drain current. The MOSFET also offers a gate threshold voltage of 1V at 250µA and a typical gate charge of 33nC at -1.8V.
This component is housed in a thermally enhanced PowerPAK® SC-70-6 package, offering a small footprint and low on-resistance. The package dimensions are 2.05mm x 2.0mm. It supports surface mounting and has a maximum power dissipation of 19W at 25°C case temperature.
Additional features include built-in ESD protection with a typical performance of 3500V. The device operates over a temperature range of -55°C to +150°C. It is RoHS3 compliant, Lead (Pb)-free, and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-12V maximum.
PowerPAK SC-70-6 surface mount package.
-55°C to +150°C junction temperature.
13mOhm maximum at 4.5V gate voltage, 5A drain current.
50 nC maximum at 4.5V gate voltage.
3500V typical.
3050 pF maximum at 6V drain-source voltage.