| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
335 pcs
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335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiA477EDJ is a P-Channel Power MOSFET designed for applications in portable devices such as smartphones, tablet PCs, and mobile computing. It utilizes TrenchFET® technology and a thermally enhanced PowerPAK® SC-70 package, offering a small footprint and efficient thermal performance.
Key electrical specifications include a drain-source voltage (Vds) of 12V and a maximum continuous drain current (Id) of 12A at 25°C case temperature. The on-resistance (Rds(on)) is as low as 0.0140 Ohms at Vgs = -4.5V, ensuring minimal power loss during operation. The device also features built-in ESD protection with a typical performance of 3800V (HBM).
This MOSFET is suitable for load switch and power management functions. Its surface mountable PowerPAK SC-70-6 package requires specific soldering considerations due to its leadless design. The operating temperature range is -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -12V.
The device is packaged in a PowerPAK SC-70-6 surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum on-resistance is 14mOhm at VGS=-4.5V.
The typical gate charge is 34.7nC.
The maximum continuous drain current is -12A at TC=25°C.
The typical ESD performance is 3800V HBM.