| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA469DJ-T1-GE3 is a P-Channel MOSFET designed for power management applications. It offers a drain-source voltage of 30V and a continuous drain current of up to 12A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 0.0265 Ohms at VGS = -10V and 0.0400 Ohms at VGS = -4.5V. The typical gate charge is 10 nC. The device operates within a temperature range of -55°C to 150°C.
This MOSFET utilizes TrenchFET Gen III technology and is housed in a thermally enhanced PowerPAK SC-70-6 package. It is suitable for applications such as load switching, DC/DC converters, and high-speed switching in battery-operated, mobile, and wearable devices.
The surface mountable PowerPAK SC-70-6 package is designed for efficient thermal management. The datasheet notes that rework conditions for this leadless component are not recommended with a soldering iron.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V
-12 A at TC = 25°C
PowerPAK SC-70-6
-55°C to +150°C
0.0265 Ω maximum
3 V at 250 µA
15.6 W