| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,715 pcs
|
1715 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA468DJ-T1-GE3 is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 30V and a continuous drain current capability of 37.8A at 25°C case temperature.
This MOSFET offers a low on-resistance of 8.4mOhm at 11A and 10V Vgs, and 11.4mOhm at 32.5A and 4.5V Vgs. The gate charge is typically 8.2 nC at 10V Vgs and 16 nC at 4.5V Vgs. It operates within a junction temperature range of -55°C to +150°C.
The device is packaged in a PowerPAK® SC-70-6, suitable for surface mounting. Its thermal characteristics include a maximum power dissipation of 19W at 25°C case temperature and a junction-to-ambient thermal resistance of 36°C/W.
Applications include DC/DC converters, synchronous buck converters, battery charging and protection, and load switches. The TrenchFET® Gen IV technology ensures high efficiency and increased power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
37.8A at case temperature 25°C.
8.4mOhm at 11A and 10V gate drive.
-55°C to +150°C.
PowerPAK SC-70-6 surface-mount package.
2.4V at 250µA drain current.
16nC at 4.5V gate drive.