SIA466EDJ-T1-GE3 The Vishay SIA466EDJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage rating and a continuous drain current of 25A. It features a low on-resistance.
Mfr Part #:

SIA466EDJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SIA466EDJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage rating and a continuous drain current of 25A. It features a low on-resistance.
✓ Total Stock: 120,928 pcs
$ Price Range: $0.99

SIA466EDJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
395 pcs
395 pcs On Request 1 On Request On Request On Request On Request On Request

SIA466EDJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA466EDJ-T1-GE3 Description

Short technical summary and product information.

The Vishay SIA466EDJ-T1-GE3 is an N-Channel MOSFET designed for power management applications. It operates with a drain-source voltage of 20V and can handle a continuous drain current of up to 25A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with a maximum of 9.5mOhm at 9A and 10V gate-source voltage. It features a typical gate charge of 6.3 nC and an input capacitance of 620 pF. The device is built using TrenchFET® technology and is housed in a thermally enhanced PowerPAK® SC-70-6 package, providing a small footprint.

 

Key electrical characteristics include a gate-source voltage range of ±20V and a gate-source threshold voltage of 2.5V at 250µA. The operating temperature range is from -55°C to 150°C. Applications include DC/DC converters and load switches in smart phones and mobile computing devices.

SIA466EDJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: Sia466edj
Canonical Name: Vishay SIA466EDJ-T1-GE3 N-Channel 20V PowerPAK SC-70-6 MOSFET
Subcategory: N-Channel

SIA466EDJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIA466EDJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA466EDJ-T1-GE3 Features

  • N-Channel MOSFET with TrenchFET technology.
  • 20V drain-source voltage rating.
  • 25A continuous drain current.
  • Low Rds(on) of 9.5mOhm at 10V.
  • Compact PowerPAK SC-70-6 package.

SIA466EDJ-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Used in power management circuits.
  • Ideal for load switches.
  • Designed for mobile computing devices.
  • Applications in smart phones.

SIA466EDJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIA466EDJ-T1-GE3?

20V.

What is the continuous drain current rating?

25A at case temperature 25°C.

What is the on-resistance of this MOSFET?

9.5mOhm at Vgs=10V and 13mOhm at Vgs=4.5V.

What is the operating temperature range?

-55°C to 150°C.

What package type does the SIA466EDJ-T1-GE3 use?

PowerPAK SC-70-6 surface mount package.

What is the typical gate charge?

6.3nC typical, with a maximum of 20nC at Vgs=10V.

Is this MOSFET ESD protected?

Yes, with 2500V HBM rating.

Home
Account

Categories