SIA462DJ-T1-GE3 The Vishay Dale SIA462DJ-T1-GE3 is an N-Channel MOSFET designed for DC/DC converters and synchronous buck converters. It offers a 30V drain-source voltage and a 12A continuous drain current.
Mfr Part #:

SIA462DJ-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA462DJ-T1-GE3 is an N-Channel MOSFET designed for DC/DC converters and synchronous buck converters. It offers a 30V drain-source voltage and a 12A continuous drain current.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.46

SIA462DJ-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
$0.46 ℹ
Qty Price
0+ 0.46
15000 pcs $0.46
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0+ 0.46
1 On Request On Request On Request On Request On Request

SIA462DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Voltage
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA462DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA462DJ-T1-GE3 is an N-Channel MOSFET featuring TrenchFET® technology. It is designed for applications such as DC/DC converters and synchronous buck converters, offering benefits like lower ringing voltage and high efficiency.

 

Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 12A at 25°C case temperature. The on-resistance is as low as 0.018 Ohms at 10V gate-source voltage. The typical gate charge is 5 nC.

 

This MOSFET is housed in a PowerPAK® SC-70-6L package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL rating of 1.

SIA462DJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: SiA462DJ
Canonical Name: Vishay Dale SiA462DJ N-Channel 30V PowerPAK SC-70-6 MOSFET

SIA462DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA462DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA462DJ-T1-GE3 Features

  • TrenchFET® power MOSFET technology.
  • 30V drain-source voltage rating.
  • 12A continuous drain current.
  • Low 0.018 Ohm max Rds(on).
  • Surface mount PowerPAK SC-70-6L package.

SIA462DJ-T1-GE3 Applications

  • Used in DC/DC converters.
  • Suitable for synchronous buck converters.
  • Enables lower ringing voltage.
  • Provides high switching efficiency.

SIA462DJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIA462DJ-T1-GE3?

The maximum drain-source voltage is 30V.

What package is the SIA462DJ-T1-GE3 available in?

It is available in a PowerPAK SC-70-6 surface mount package (SOT-363).

What is the operating temperature range of the SIA462DJ-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What is the on-resistance of the SIA462DJ-T1-GE3?

The maximum on-resistance is 18 mΩ at Vgs=10V, 20 mΩ at 6V, and 22 mΩ at 4.5V.

What is the gate charge of the SIA462DJ-T1-GE3?

Typical gate charge is 5 nC, maximum 17 nC at Vgs=10V.

What is the maximum power dissipation of the SIA462DJ-T1-GE3?

Maximum power dissipation is 19W at case temperature 25°C, derated to 12W at 70°C case, and 3.5W at ambient 25°C.

What is the pulsed drain current rating of the SIA462DJ-T1-GE3?

The pulsed drain current is 40A for a 300 μs pulse.

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