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SIA456DJ-T1-GE3 The Vishay SIA456DJ-T1-GE3 is an N-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 2.6A. It features a low on-resistance of 1.38 Ohm at 4.5V gate-source voltage.
Mfr Part #:

SIA456DJ-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay SIA456DJ-T1-GE3 is an N-Channel MOSFET with a 200V drain-source voltage and a continuous drain current of 2.6A. It features a low on-resistance of 1.38 Ohm at 4.5V gate-source voltage.
✓ Total Stock: 17,121 pcs
$ Price Range: $0.99

SIA456DJ-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Risen Electronics ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Xingangxin ✓
Non-Authorised Inventory information
3,101 pcs
On Request
3101 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIA456DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SIA456DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay SIA456DJ-T1-GE3 is a single N-Channel Power MOSFET designed for applications requiring high voltage and efficient switching. It boasts a maximum drain-source voltage of 200V and a continuous drain current rating of 2.6A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 1.38 Ohms at a gate-source voltage of 4.5V, and a gate charge of 14.5 nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a thermally enhanced PowerPAK SC-70-6 package, suitable for surface mounting. Its small footprint and low on-resistance make it ideal for boost converter applications in portable devices.

SIA456DJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: SiA4xxdj
Canonical Name: Vishay SiA456DJ N-Channel 200V Power MOSFET
Subcategory: Power MOSFET

SIA456DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA456DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA456DJ-T1-GE3 Features

  • 200V drain-source breakdown voltage.
  • 2.6A continuous drain current.
  • 1.38 Ohm maximum Rds On.
  • N-Channel MOSFET technology.
  • PowerPAK SC-70-6 package.

SIA456DJ-T1-GE3 Applications

  • Power management in portable electronics.
  • DC-DC converter switching circuits.
  • Load switching for battery-powered devices.
  • Gate drive and signal switching applications.

SIA456DJ-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIA456DJ-T1-GE3?

The maximum drain-source voltage is 200 V.

What is the continuous drain current of the SIA456DJ-T1-GE3?

The continuous drain current is 2.6A at 25°C case temperature.

What is the maximum Rds On for the SIA456DJ-T1-GE3?

The maximum Rds On is 1.38 Ohm at 750mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SIA456DJ-T1-GE3 MOSFET supplied in?

It is supplied in a PowerPAK SC-70-6 package.

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