| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,007 pcs
|
1007 pcs | On Request | 1 | On Request | On Request | 1407+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIA447DJ-T1-GE3 is a P-Channel MOSFET from the TrenchFET series, housed in a thermally enhanced PowerPAK SC-70-6 package. This device is designed for applications requiring a low voltage drop, such as battery switches, battery management, and load switches in mobile computing devices like smartphones and tablet PCs.
Key electrical specifications include a drain-source voltage (Vds) of 12V and a maximum continuous drain current (Id) of 12A at 25°C case temperature. The on-resistance (Rds On) is as low as 13.5mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 7A. The gate charge (Qg) is typically 31nC, with a maximum of 80nC at 8V Vgs.
Operating temperature ranges from -55°C to +150°C. The MOSFET is surface-mounted and comes in a PowerPAK SC-70-6 package, offering a small footprint. It is rated for a maximum power dissipation of 19W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -12 V.
The maximum gate-to-source voltage (Vgs) is ±8 V.
The device is housed in a surface-mount PowerPAK SC-70-6 package.
The operating junction temperature range is -55°C to +150°C.
The maximum on-resistance is 13.5 mΩ at 7 A drain current and 4.5 V gate-source voltage.
The maximum continuous drain current is -12 A at 25°C case temperature.
The maximum input capacitance is 2880 pF at 6 V drain-source voltage.