| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,781 pcs
|
12781 pcs | On Request | 1 | On Request | On Request | 18+15+ | On Request | On Request | |
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
140 pcs
|
140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA445EDJ-T1-GE3 is a P-Channel TrenchFET power MOSFET designed for applications such as smartphones, tablet PCs, and mobile computing. It features a drain-source voltage of 20V and a maximum continuous drain current of 12A at 25°C case temperature.
This MOSFET offers low on-resistance, with a maximum of 0.0165 Ohms at 7A and 4.5V Vgs. It includes built-in ESD protection with a typical performance of 2000V. The device is packaged in a thermally enhanced PowerPAK SC-70-6 package, which provides a small footprint area.
Key electrical characteristics include a gate charge (Qg) of 72 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2130 pF maximum at 10V Vds. The operating temperature range is -55°C to +150°C.
Mounting is via surface mount technology. The datasheet indicates it is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20V.
The component utilizes a PowerPAK SC-70-6 surface mount package.
The operating junction temperature range spans from -55°C to +150°C.
The typical gate charge is 23nC, with a maximum rating of 72nC at 10V.
The continuous source-drain diode current is rated at 12A at a case temperature of 25°C.
The device supports a pulsed drain current of up to 50A for durations up to 300 microseconds.