| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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84 pcs
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84 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA443DJ-T1-GE3 is a P-Channel MOSFET with a drain-source voltage of 20V and a continuous current rating of 9A (Tc). It features a low on-resistance of 45mOhm at 4.7A and 4.5V gate-source voltage, with a gate charge of 25nC at 8V.
This MOSFET is designed for surface mounting and comes in a PowerPAK SC-70-6 package. It operates within a temperature range of -55°C to 150°C (TJ). The device has an input capacitance of 750pF at 10V and a gate threshold voltage of 1V at 250µA. Its maximum power dissipation is 3.3W (Ta) or 15W (Tc).
Key electrical characteristics include a gate-source voltage limit of ±8V and drive voltages between 1.8V and 4.5V. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
It comes in a PowerPAK SC-70-6 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 9A at case temperature (Tc).
The on-resistance is a maximum of 45mOhm at 4.5V gate voltage and 4.7A drain current.
The gate threshold voltage is a maximum of 1V at 250µA drain current.
The total gate charge is a maximum of 25nC at 8V gate voltage.