SIA437DJ-T1-GE3 The Vishay Dale SIA437DJ-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum continuous drain current of 29.7A. It is housed in a PowerPAK SC-70-6 package.
Mfr Part #:

SIA437DJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA437DJ-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum continuous drain current of 29.7A. It is housed in a PowerPAK SC-70-6 package.
✓ Total Stock: 24,470 pcs
$ Price Range: $0.99

SIA437DJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,450 pcs
5450 pcs On Request 1 On Request On Request On Request On Request On Request

SIA437DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA437DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA437DJ-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a Drain-Source Voltage (Vds) of 20V and a maximum continuous drain current of 29.7A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with values such as 0.0145 Ohms at 8A and 4.5V Vgs. The gate charge (Qg) is typically 28 nC. It operates within a junction temperature range of -50°C to 150°C.

 

The device is packaged in a thermally enhanced PowerPAK SC-70-6 package, known for its small footprint. It is suitable for surface mounting and is designed for applications requiring low voltage drop, such as battery switches, load switches, and power management in mobile devices.

 

Key electrical characteristics include a gate-source voltage range of ±8V and an input capacitance of 2340 pF at 10V. The maximum power dissipation is 19W at 25°C case temperature and 3.5W at 25°C ambient temperature.

SIA437DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20 V (D-S) MOSFET
Subcategory: Transistors - FETs

SIA437DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA437DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA437DJ-T1-GE3 Features

  • P-Channel 20V MOSFET
  • 29.7A continuous drain current
  • Low on-resistance
  • PowerPAK SC-70-6 package
  • Surface mountable

SIA437DJ-T1-GE3 Applications

  • Battery switches
  • Load switches
  • Power management
  • Mobile computing

SIA437DJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What is the package type?

PowerPAK SC-70-6 surface-mount package.

What is the operating temperature range?

-50°C to 150°C.

What is the continuous drain current?

29.7A at case temperature 25°C.

What is the on-resistance?

14.5mOhm at VGS=-4.5V.

What is the gate threshold voltage?

900mV maximum at 250µA drain current.

What is the maximum power dissipation?

19W at case temperature 25°C.

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