| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA436DJ-T1-GE3 is an N-Channel MOSFET with a drain-source voltage of 8V. It is designed for load switch applications in portable devices such as smartphones and tablet PCs.
Key electrical characteristics include a maximum continuous drain current of 12A and a low on-resistance of 9.4mOhm at 15.7A and 4.5V Vgs. The gate charge (Qg) is typically 15nC. The MOSFET operates within a temperature range of -55°C to +150°C.
This component utilizes TrenchFET® power MOSFET technology and is housed in a thermally enhanced PowerPAK® SC-70-6 package, offering a small footprint area. It is suitable for low voltage gate drive and low voltage drop applications, serving as a power switch for ICs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8 V.
PowerPAK SC-70-6.
-55°C to 150°C (junction temperature).
12 A.
9.4 mOhm maximum at 15.7A.
25.2 nC at 5V gate voltage (maximum) and 15 nC typical.
19 W.