| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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241,067 pcs
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241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay SIA433EDJ-T1-GE3 is a P-Channel MOSFET designed for various applications requiring efficient power switching. It offers a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of up to 12A under specific conditions.
The MOSFET exhibits a low on-resistance (RDS(on)) of 18mΩ at a gate-source voltage (VGS) of 4.5V, making it suitable for load switching and battery management in portable devices. The typical gate charge (Qg) is 20 nC.
Packaged in a thermally enhanced PowerPAK SC-70-6L, this component is designed for surface mounting. It operates within a temperature range of -55°C to 150°C.
The device includes built-in ESD protection with a Zener diode, offering typical ESD performance of 1800V. It is RoHS compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) for the SIA433EDJ-T1-GE3 is 20V.
The maximum continuous drain current (ID) is 12A at TC = 25°C and TC = 70°C.
The on-resistance (RDS(on)) is a maximum of 18mΩ at 7.6A and 4.5V VGS.
The operating junction and storage temperature range is -55°C to 150°C.
The SIA433EDJ-T1-GE3 is in a PowerPAK SC-70-6L package for surface mounting.
Yes, this component is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.