| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA432DJ-T1-GE3 is a high-performance N-Channel MOSFET designed for various electronic applications. It offers a 30V drain-to-source voltage and can handle a continuous drain current of 12A (Tc). The MOSFET exhibits a low on-resistance of 20mOhm at 6A and 10V gate-source voltage, ensuring efficient power transfer.
This device features a gate charge of 20nC at 10V and an input capacitance of 800pF at 15V. The gate threshold voltage is 3V at 250µA, and the maximum gate-source voltage is ±20V. It operates within a temperature range of -55°C to 150°C (TJ).
The SIA432DJ-T1-GE3 is housed in a PowerPAK® SC-70-6 package, designed for surface mounting. Its maximum power dissipation is 3.5W (Ta) or 19.2W (Tc). This MOSFET is suitable for applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
12A at case temperature.
20mOhm maximum at 6A and 10V gate drive.
20nC maximum at 10V gate-source voltage.
800pF maximum at 15V drain-source voltage.
-55°C to 150°C junction temperature.
PowerPAK SC-70-6 surface mount package.