SIA431DJ-T1-GE3 The Vishay Dale SIA431DJ-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount PowerPAK SC-70-6 package.
Mfr Part #:

SIA431DJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA431DJ-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount PowerPAK SC-70-6 package.
✓ Total Stock: 21,629 pcs
$ Price Range: $0.99

SIA431DJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,609 pcs
2609 pcs On Request 1 On Request On Request 12+ On Request On Request

SIA431DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA431DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA431DJ-T1-GE3 is a P-Channel MOSFET designed for load switch, PA switch, and battery switch applications in portable devices. It features a 20V drain-source voltage and a maximum continuous drain current of 12A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance, with a maximum of 0.025 Ohms at VGS = -4.5V. The gate charge (Qg) is typically 24 nC. The MOSFET operates within a temperature range of -55°C to +150°C.

 

This component utilizes the TrenchFET® power MOSFET technology and comes in a thermally enhanced PowerPAK® SC-70 package, offering a small footprint. It is suitable for surface mounting.

 

The device has a gate-source voltage rating of ±8V and a gate threshold voltage of 850mV at 250µA. It is RoHS3 compliant.

SIA431DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 20V, 12A, PowerPAK SC-70-6
Subcategory: P-Channel

SIA431DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA431DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA431DJ-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 20V drain-source voltage rating.
  • 12A continuous drain current.
  • Low on-resistance.
  • PowerPAK SC-70-6 package.

SIA431DJ-T1-GE3 Applications

  • Power management in portable electronics.
  • Load switching for battery-powered devices.
  • DC-DC converter and regulator circuits.
  • Low-voltage motor control applications.

SIA431DJ-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIA431DJ-T1-GE3?

The maximum drain-to-source voltage is -20 V.

What is the continuous drain current rating?

The continuous drain current is -12 A at case temperature 25°C and -9.6 A at ambient temperature 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 0.025 Ohm at VGS = -4.5 V, 0.031 Ohm at VGS = -2.5 V, 0.041 Ohm at VGS = -1.8 V, and 0.070 Ohm at VGS = -1.5 V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SIA431DJ-T1-GE3 available in?

It is available in a PowerPAK SC-70-6 surface-mount package.

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