| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIA430DJT-T1-GE3 is an N-Channel MOSFET designed for low-voltage power switching applications. It features a drain-to-source voltage (Vdss) of 20V and supports a continuous drain current of 12A.
The device has a maximum gate charge of 18 nC at Vgs = 10V, with a typical gate charge of 5.3 nC. This low gate charge enables fast switching and reduced driver losses. The MOSFET is housed in a PPAK SC70-6 surface-mount package, suitable for compact PCB layouts.
Typical applications include load switching, DC-DC converters, and power management in portable and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20 V.
The maximum gate charge is 18 nC at Vgs = 10 V.
The typical gate charge is 5.3 nC.