SIA430DJ-T1-GE3 The Vishay Dale SIA430DJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 12A. It features low on-resistance and is housed in a PowerPAK SC-70-6 package.
Mfr Part #:

SIA430DJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA430DJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 12A. It features low on-resistance and is housed in a PowerPAK SC-70-6 package.
✓ Total Stock: 4,753 pcs
$ Price Range: $0.99

SIA430DJ-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,503 pcs
2503 pcs On Request 1 On Request On Request 1341+ On Request On Request
Non-Authorised Inventory information
2,250 pcs
2250 pcs On Request 1 On Request On Request 1231+ On Request On Request

SIA430DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA430DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA430DJ-T1-GE3 is a high-performance N-Channel MOSFET designed for load switch applications. It features TrenchFET power MOSFET technology and a thermally enhanced PowerPAK SC-70-6 package, offering a small footprint.

 

This MOSFET boasts a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 12A at 25°C case temperature. Its on-resistance (Rds On) is as low as 13.5mOhm at 7A and 10V Vgs. The gate charge (Qg) is typically 5.3nC. The device operates over a wide temperature range of -55°C to 150°C.

 

The PowerPAK SC-70-6 package is surface-mountable, making it suitable for compact designs. The device is RoHS3 compliant and Halogen-free, indicating its suitability for environmentally conscious applications. Its low on-resistance and high current handling capabilities make it an efficient choice for power management circuits.

SIA430DJ-T1-GE3 Quick Information

Product Type: MOSFET
Series: PowerPAK
Canonical Name: SiA430DJ N-Channel 20V PowerPAK SC-70-6 MOSFET
Subcategory: N-Channel

SIA430DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIA430DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA430DJ-T1-GE3 Features

  • N-Channel 20V Power MOSFET
  • Low Rds On: 13.5mOhm at 7A, 10V
  • High continuous drain current: 12A
  • PowerPAK SC-70-6 package
  • RoHS3 Compliant and Halogen-free

SIA430DJ-T1-GE3 Applications

  • Ideal for load switch applications
  • Suitable for compact power designs
  • Efficient power management circuits
  • Used in thermally demanding applications

SIA430DJ-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIA430DJ-T1-GE3?

The drain-source voltage (Vds) for the SIA430DJ-T1-GE3 is 20V.

What is the maximum continuous drain current of the SIA430DJ-T1-GE3?

The maximum continuous drain current (Id) is 12A at a case temperature of 25°C.

What is the on-resistance (Rds On) for the SIA430DJ-T1-GE3?

The Rds On is a maximum of 13.5mOhm at 7A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIA430DJ-T1-GE3 MOSFET in?

The SIA430DJ-T1-GE3 is supplied in a PowerPAK SC-70-6 package.

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