SIA429DJT-T1-GE3 The Vishay Dale SIA429DJT-T1-GE3 is a P-Channel MOSFET designed for load switch and charger applications in portable devices. It offers a 20V drain-source voltage and a continuous drain current of 12A.
Mfr Part #:

SIA429DJT-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA429DJT-T1-GE3 is a P-Channel MOSFET designed for load switch and charger applications in portable devices. It offers a 20V drain-source voltage and a continuous drain current of 12A.
✓ Total Stock: 139,077 pcs
$ Price Range: $0.99

SIA429DJT-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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139,077 pcs
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SIA429DJT-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA429DJT-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA429DJT-T1-GE3 is a P-Channel MOSFET featuring TrenchFET power MOSFET technology and a thermally enhanced PowerPAK SC-70-6 package. This component is designed for applications such as load switches and charger switches in portable devices, as well as DC/DC converters.

 

Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of up to 12A at 25°C case temperature. The on-resistance is as low as 0.0205 Ohms at a gate-source voltage of -4.5V. The device operates within a temperature range of -55°C to +150°C.

 

The MOSFET is housed in a compact PowerPAK SC-70-6 package, measuring only 0.6mm in height, making it suitable for space-constrained designs. It is surface mountable and rated for a maximum power dissipation of 19W at 25°C case temperature and 3.5W at 25°C ambient temperature.

 

This MOSFET is 100% Rg tested and is RoHS3 compliant, Moisture Sensitivity Level 1 (MSL 1), and REACH unaffected.

SIA429DJT-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIA429DJT-T1-GE3 P-Channel 20V MOSFET
Subcategory: P-Channel

SIA429DJT-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA429DJT-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA429DJT-T1-GE3 Features

  • P-Channel TrenchFET power MOSFET.
  • Thermally enhanced PowerPAK SC-70-6 package.
  • 20V drain-source voltage rating.
  • 12A continuous drain current capability.
  • Low on-resistance values.

SIA429DJT-T1-GE3 Applications

  • Load switch for portable devices.
  • Charger switch for portable devices.
  • DC/DC converter applications.

SIA429DJT-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIA429DJT-T1-GE3?

The maximum drain-source voltage is -20 V.

What is the continuous drain current rating?

The continuous drain current is -12 A at a case temperature of 25 °C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 20.5 mOhm at a gate-source voltage of -4.5 V and a drain current of 6 A.

What package does the SIA429DJT-T1-GE3 come in?

It comes in a surface-mount PowerPAK SC-70-6 package.

What is the operating temperature range?

The operating junction temperature range is -55 °C to +150 °C.

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