| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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139,077 pcs
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139077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIA429DJT-T1-GE3 is a P-Channel MOSFET featuring TrenchFET power MOSFET technology and a thermally enhanced PowerPAK SC-70-6 package. This component is designed for applications such as load switches and charger switches in portable devices, as well as DC/DC converters.
Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of up to 12A at 25°C case temperature. The on-resistance is as low as 0.0205 Ohms at a gate-source voltage of -4.5V. The device operates within a temperature range of -55°C to +150°C.
The MOSFET is housed in a compact PowerPAK SC-70-6 package, measuring only 0.6mm in height, making it suitable for space-constrained designs. It is surface mountable and rated for a maximum power dissipation of 19W at 25°C case temperature and 3.5W at 25°C ambient temperature.
This MOSFET is 100% Rg tested and is RoHS3 compliant, Moisture Sensitivity Level 1 (MSL 1), and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20 V.
The continuous drain current is -12 A at a case temperature of 25 °C.
The maximum on-resistance is 20.5 mOhm at a gate-source voltage of -4.5 V and a drain current of 6 A.
It comes in a surface-mount PowerPAK SC-70-6 package.
The operating junction temperature range is -55 °C to +150 °C.