| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIA427DJ-T1-GE3 is a P-Channel MOSFET from Vishay Dale designed for low-voltage power management applications. It features a maximum drain-to-source voltage of 8V and a continuous drain current of 12A at 25°C case temperature.
With a maximum on-resistance of 16mOhm at 8.2A and 4.5V gate drive, this device offers efficient switching performance. The gate threshold voltage is 800mV maximum at 250µA, and the maximum gate-source voltage is ±5V.
Input capacitance is 2300pF at 4V drain-source, and total gate charge is 50nC at 5V gate-source. Power dissipation is rated at 3.5W at 25°C ambient and 19W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C.
The device is housed in a PowerPAK SC70-6 package, suitable for surface mount assembly. It uses MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 8V.
The continuous drain current (Id) is 12A at Tc = 25°C.
The maximum on-resistance (Rds On) is 16mOhm at 8.2A and 4.5V Vgs.
The operating junction temperature range is -55°C to 150°C.
The maximum gate-source threshold voltage (Vgs(th)) is 800mV at 250µA drain current.
Maximum power dissipation is 3.5W at Ta = 25°C and 19W at Tc = 25°C.