SIA426DJ-T1-GE3 The Vishay Siliconix SIA426DJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage rating and a continuous current capability of 4.5A. It is housed in a compact PowerPAK SC-70-6 package.
Mfr Part #:

SIA426DJ-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SIA426DJ-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage rating and a continuous current capability of 4.5A. It is housed in a compact PowerPAK SC-70-6 package.
✓ Total Stock: 13,547 pcs
$ Price Range: $0.99

SIA426DJ-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,655 pcs
9655 pcs On Request 1 On Request On Request 19+ On Request On Request
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
892 pcs
892 pcs On Request 1 On Request On Request 19+ On Request On Request

SIA426DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA426DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SIA426DJ-T1-GE3 is an N-Channel MOSFET designed for power switching applications. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.5A at a case temperature of 25°C. The MOSFET exhibits low on-resistance, with a maximum of 23.6 mOhm at Vgs = 10V and Id = 9.9A.

 

This device utilizes TrenchFET technology and comes in a thermally enhanced PowerPAK SC-70-6 package, offering a small footprint area suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). Key electrical characteristics include a gate-source voltage (Vgs) of ±12V and a gate charge (Qg) of 7.9 nC typical at Vgs = 10V.

 

Applications for this MOSFET include load switching. Its robust construction and performance metrics make it a reliable choice for various electronic circuits requiring efficient power management.

SIA426DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SIA426DJ-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIA426DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA426DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA426DJ-T1-GE3 Features

  • N-Channel MOSFET technology.
  • 20V drain-source voltage rating.
  • 4.5A continuous drain current.
  • Low on-resistance performance.
  • Compact PowerPAK SC-70-6 package.

SIA426DJ-T1-GE3 Applications

  • Suitable for load switch applications
  • Ideal for low-voltage power management
  • Used in portable electronic devices
  • Designed for battery-powered systems
  • Applicable in DC-DC converter circuits

SIA426DJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIA426DJ-T1-GE3?

The drain-source voltage (Vds) for the SIA426DJ-T1-GE3 is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 4.5A.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 7.9 nC at a Vgs of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIA426DJ-T1-GE3 in?

This MOSFET is supplied in the PowerPAK SC-70-6 package.

Is this MOSFET RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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