SIA421DJ-T1-GE3 The Vishay Dale SIA421DJ-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a maximum continuous drain current of 12A. It features a low on-resistance and is housed in a surface-mount PowerPAK SC-70-6 package.
Mfr Part #:

SIA421DJ-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA421DJ-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a maximum continuous drain current of 12A. It features a low on-resistance and is housed in a surface-mount PowerPAK SC-70-6 package.
✓ Total Stock: 21,958 pcs
$ Price Range: $0.99

SIA421DJ-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,925 pcs
17925 pcs On Request 1 On Request On Request 12+ On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
13 pcs
13 pcs On Request 1 On Request On Request On Request On Request On Request

SIA421DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA421DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiA421DJ is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices and buck converters. It offers a drain-source voltage (Vds) of 30V and a low on-resistance of 35mOhm at a gate-source voltage (Vgs) of -10V.

 

This MOSFET has a maximum continuous drain current (Id) of 12A at 25°C case temperature. The gate charge (Qg) is typically 10 nC at 10V Vgs. It operates over a temperature range of -55°C to 150°C.

 

The device is packaged in a thermally enhanced PowerPAK SC-70-6 package, which has a small footprint area suitable for space-constrained designs. The mounting type is surface mount.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The input capacitance (Ciss) is 950 pF at 15V Vds.

SIA421DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiA421DJ P-Channel 30 V MOSFET
Subcategory: MOSFETs

SIA421DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA421DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA421DJ-T1-GE3 Features

  • P-Channel TrenchFET Power MOSFET.
  • 30V drain-source voltage rating.
  • Low on-resistance of 35mOhm.
  • 12A continuous drain current.
  • Compact PowerPAK SC-70-6 package.

SIA421DJ-T1-GE3 Applications

  • Ideal for portable device load switches.
  • Suitable for buck converter designs.
  • Used in power management circuits.
  • Efficient switching applications.

SIA421DJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIA421DJ-T1-GE3?

30V.

What is the continuous drain current rating?

12A at case temperature 25°C.

What is the on-resistance at 10V gate drive?

35 milliohms maximum at Id=5.3A, Vgs=-10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the device available in?

PowerPAK SC-70-6 surface mount package.

What is the gate threshold voltage?

3V maximum at 250µA drain current.

What is the maximum power dissipation?

19W at case temperature 25°C and 3.5W at ambient temperature 25°C.

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