| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,033 pcs
|
3033 pcs | On Request | 1 | On Request | On Request | 1323+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SIA419DJ-T1-GE3 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-to-source voltage of 20V and can handle a continuous drain current of 12A at a case temperature.
The MOSFET has a low on-resistance of 30mOhm at a specific gate-source voltage and drain current. It operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a PowerPAK® SC-70-6, this component is designed for surface mounting. Its input capacitance is 1500 pF at 10V, and gate charge is 29 nC at 5V. The gate threshold voltage is 850mV at 250µA.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
It comes in a PowerPAK SC-70-6 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 12A at case temperature.
The maximum on-resistance is 30mOhm at 5.9A drain current and 4.5V gate-source voltage.
The maximum gate charge is 29nC at 5V gate-source voltage.
The drive voltage for maximum Rds On is 1.2V and for minimum Rds On is 4.5V.