| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIA417DJ-T1-GE3 is a P-Channel MOSFET from Vishay Dale, designed for power switching applications. It features a maximum drain-source voltage of 8V and a continuous drain current of 12A at case temperature. The device offers a low on-resistance of 23mOhm at 7A and 4.5V gate drive, enabling efficient power conversion. Power dissipation is rated at 19W at case temperature and 3.5W at ambient temperature. The MOSFET is housed in a PPAK SC70-6 surface-mount package, suitable for compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 8V.
The continuous drain current is 12A at case temperature (Tc).
The maximum on-resistance is 23 mOhm at 7A and 4.5V gate drive.
Power dissipation is 3.5W at ambient temperature and 19W at case temperature.
The MOSFET is packaged in PPAK SC70-6.