SIA414DJ-T1-GE3 The Vishay Dale SIA414DJ-T1-GE3 is an N-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 12A. It is housed in a surface-mount PowerPAK SC-70-6 package.
Mfr Part #:

SIA414DJ-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA414DJ-T1-GE3 is an N-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 12A. It is housed in a surface-mount PowerPAK SC-70-6 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SIA414DJ-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

SIA414DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA414DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiA414DJ is an N-Channel TrenchFET Power MOSFET designed for load switching in portable applications. It features an 8V drain-source voltage and a low on-resistance of 11mOhm at 9.7A and 4.5V Vgs. The continuous drain current is rated up to 12A.

 

This MOSFET utilizes a thermally enhanced PowerPAK SC-70 package, offering a small footprint area suitable for space-constrained designs. The operating temperature range is -55°C to 150°C. The device supports a gate-source voltage of ±5V and has a gate charge of 32 nC at 5V.

 

Key electrical characteristics include a gate threshold voltage of 800mV at 250µA and an input capacitance of 1800 pF at 4V. The maximum power dissipation is 3.5W at 25°C ambient temperature and 19W at 25°C case temperature. The surface mountable PowerPAK SC-70-6 package is designed for efficient thermal management.

SIA414DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiA414DJ N-Channel 8-V (D-S) MOSFET

SIA414DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA414DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA414DJ-T1-GE3 Features

  • N-Channel TrenchFET Power MOSFET.
  • 8V drain-source voltage rating.
  • 12A continuous drain current.
  • 11mOhm maximum Rds On.
  • PowerPAK SC-70-6 surface mount package.

SIA414DJ-T1-GE3 Applications

  • Used in low-voltage power switching circuits.
  • Ideal for battery-powered device load switches.
  • Suitable for DC-DC converter applications.
  • Employed in portable electronics power management.

SIA414DJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

8V.

What is the package type?

PowerPAK SC-70-6 surface-mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

800mV at 250µA.

What is the on-resistance?

11mOhm at 9.7A and 4.5V gate drive.

What is the continuous drain current?

12A at 25°C case temperature.

What is the gate charge?

32nC at 5V.

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