| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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390 pcs
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390 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The Vishay Dale SIA413DJ-T1-GE3 is a P-Channel MOSFET designed for applications requiring efficient power switching. It features a maximum drain-source voltage of 12V and a continuous drain current of 12A at 25°C case temperature.
This MOSFET offers a low on-resistance of 29mOhm at a gate-source voltage of 4.5V, ensuring minimal power loss during operation. The gate charge is typically 23nC at 8V, contributing to fast switching speeds.
Packaged in a thermally enhanced PowerPAK SC-70-6, this component is suitable for surface mounting. Its operating temperature range is -55°C to 150°C. Key applications include load switching, PA switching, and battery switching for portable devices.
Designed with TrenchFET technology, the SiA413DJ provides a small footprint area and low on-resistance characteristics. The PowerPAK SC-70-6 is a leadless package with exposed copper terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SIA413DJ-T1-GE3 is 12V.
The maximum continuous drain current (Id) for the SIA413DJ-T1-GE3 is 12A at 25°C case temperature.
The on-resistance (Rds(on)) of the SIA413DJ-T1-GE3 is a maximum of 29mOhm at a gate-source voltage of 4.5V and a drain current of 6.7A.
The SIA413DJ-T1-GE3 MOSFET is in a PowerPAK SC-70-6 package.
The operating temperature range for the SIA413DJ-T1-GE3 is -55°C to 150°C.