| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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480 pcs
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480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIA411DJ-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It operates with a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current of 12A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 30mOhm at 5.9A and 4.5V, a gate charge (Qg) of 38 nC at 8V, and an input capacitance (Ciss) of 1200 pF at 10V. The gate threshold voltage (Vgs(th)) is 1V at 250µA, with a maximum gate-source voltage (Vgs) of ±8V. The drive voltage ranges from 1.5V to 4.5V.
This MOSFET is housed in a PowerPAK® SC-70-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 3.5W (Ta) and 19W (Tc).
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are treated with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20V.
The maximum continuous drain current is 12A at 25°C case temperature.
The operating junction temperature range is -55°C to 150°C.
It is available in a PowerPAK SC-70-6 surface-mount package.
The maximum on-resistance is 30mOhm at a gate drive of 4.5V and drain current of 5.9A.
The maximum gate threshold voltage is 1V at a drain current of 250µA.
Maximum power dissipation is 3.5W at ambient temperature and 19W at case temperature.