SIA106DJ-T1-GE3 The Vishay Dale SIA106DJ-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage. It features a low on-resistance and is available in a PowerPAK SC-70-6 package.
Mfr Part #:

SIA106DJ-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA106DJ-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage. It features a low on-resistance and is available in a PowerPAK SC-70-6 package.
✓ Total Stock: 27 pcs
$ Price Range: $0.99

SIA106DJ-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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27 pcs
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SIA106DJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA106DJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIA106DJ-T1-GE3 is an N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage of 60V and a continuous drain current rating of up to 12A.

 

Key electrical characteristics include a maximum on-resistance of 18.5mOhm at 4A and 10V, and a gate charge of 13.5nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This component is housed in a PowerPAK SC-70-6 package, suitable for surface mounting. Its features make it applicable for primary side switching, synchronous rectification, and DC/DC converters.

SIA106DJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiA106DJ N-Channel 60 V MOSFET
Subcategory: N-Channel

SIA106DJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIA106DJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA106DJ-T1-GE3 Features

  • N-Channel 60V Power MOSFET.
  • Low Rds On at 18.5mOhm max.
  • Surface mount PowerPAK SC-70-6.
  • Wide operating temperature range.
  • Tuned for low RDS - Qoss.

SIA106DJ-T1-GE3 Applications

  • Primary side switch applications.
  • Synchronous rectification circuits.
  • DC/DC converter designs.
  • Motor drive switching.
  • Boost converter circuits.

SIA106DJ-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIA106DJ-T1-GE3?

The drain-source voltage is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at Tc=25°C and 10A at Ta=25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 18.5mOhm at a gate-source voltage of 10V and a drain current of 4A.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIA106DJ-T1-GE3 in?

It is in a PowerPAK SC-70-6 package.

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