BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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79 pcs
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79 pcs | On Request | 1 | On Request | On Request | AAA*W12C | On Request | On Request |
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The Vishay Siliconix SI9958DY is a complementary MOSFET array containing both N-Channel and P-Channel transistors. It is housed in a standard SO-8 package, suitable for surface mounting.
This device offers a drain-source voltage (VDS) of 20V for the N-Channel and -20V for the P-Channel. The continuous drain current (ID) is rated up to 3.5A at 25°C ambient temperature. The drain-source on-resistance (RDS(on)) is as low as 0.10 Ohms at VGS = 10V for the N-Channel and VGS = -10V for the P-Channel.
The operating junction and storage temperature range is from -55°C to 150°C. The maximum power dissipation is 2.0W at 25°C ambient temperature. This MOSFET array is suitable for applications requiring complementary N-channel and P-channel devices in a single package.
| Qty | Low | High |
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| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SI9958DY is a dual N-channel and P-channel MOSFET array from Siliconix, packaged in an SO-8 surface mount package.
The drain-source voltage rating is 20 V for the N-channel and -20 V for the P-channel.
At 25°C ambient, the continuous drain current is 3.5 A for both N-channel and P-channel. At 70°C, it derates to 2.8 A.
The typical gate threshold voltage is 1.0 V for the N-channel and -1.0 V for the P-channel (VDS = VGS, ID = 250 µA).
The operating junction and storage temperature range is -55°C to 150°C.
The SI9958DY is supplied in an SO-8 surface mount package.
The maximum power dissipation is 2.0 W at 25°C ambient, derating to 1.3 W at 70°C.