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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 97+ | On Request | On Request |
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The Vishay SI9956DY-T1 is a dual N-Channel MOSFET in a surface-mount SOIC N package. It is designed for applications requiring efficient switching and power handling.
Key electrical specifications include a maximum drain-source voltage of 20V and a maximum continuous drain current of 3.5A. The on-resistance is specified as 100mΩ at 10V. The MOSFET operates within a temperature range of -55°C to 150°C.
This component features typical turn-on delay time of 8ns, turn-off delay time of 21ns, rise time of 12ns, and fall time of 8ns. The typical gate charge at 10V is 7nC. The package dimensions are 5mm in length, 4mm in width, and 1.55mm in height, making it suitable for space-constrained designs.
The SI9956DY-T1 is mounted using a surface mount technique. Its dual configuration and N-channel type make it versatile for use in power management circuits and other switching applications.
The SI9956DY-T1 comes in an SOIC N package.
The SI9956DY-T1 operates from -55°C to 150°C.
The maximum drain-source voltage is 20V.
The maximum continuous drain current is 3.5A.
The typical on-resistance is 100mOhm at 10V gate drive.
The typical gate charge is 7nC at 10V.
Typical turn-on delay is 8ns, rise time is 12ns, turn-off delay is 21ns, and fall time is 8ns.