| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,250 pcs
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1250 pcs | On Request | 1 | On Request | On Request | 97+ | On Request | On Request |
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The SI9956DY-T1 from Vishay Siliconix is a power MOSFET featuring an N-Channel enhancement mode. It is designed for applications requiring a maximum drain-source voltage of 20V and a maximum continuous drain current of 3.5A.
Key electrical characteristics include a maximum drain-source resistance of 100 mOhm at 10V and a typical gate charge of 7nC at 10V. The component has typical rise and fall times of 12ns and 8ns respectively, with turn-on and turn-off delay times of 8ns and 21ns.
Operating within a temperature range of -55°C to 150°C, the SI9956DY-T1 has a maximum power dissipation of 2000mW. It is housed in a surface-mount SOIC N package with gull-wing leads, measuring 5mm in length, 4mm in width, and 1.55mm in height.
This MOSFET is suitable for various switching and amplification tasks in electronic circuits. Its dual-element configuration per chip and enhancement mode operation make it a versatile component for power management solutions.
20V.
SOP-8 surface-mount package.
-55°C to 150°C.
Two (dual).
7 nC at 10V.
Turn-on delay 8 ns, rise time 12 ns, turn-off delay 21 ns, fall time 8 ns.